? semiconductor components industries, llc, 2005 august, 2005 ? rev. 6 1 publication order number: mmbz5221elt1/d mmbz5221elt1 series preferred device zener voltage regulators 225 mw sot?23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot?23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. features ? 225 mw rating on fr?4 or fr?5 board ? zener voltage range ? 2.4 v to 91 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model ? peak power ? 225 w (8 x 20 s) ? pb?free packages are available mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v?0 maximum ratings rating symbol max unit peak power dissipation @ 20 s (note 1) @ t l 25 c p pk 225 w total power dissipation on fr?5 board, (note 2) @ t a = 25 c derated above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total power dissipation on alumina substrate, (note 3) @ t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature range t j , t stg ?65 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. nonrepetitive current pulse per figure 9. 2. fr?5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina. 3 cathode 1 anode see specific marking information in the device marking column of the electrical characteristics table on page 2 o f this data sheet. device marking information http://onsemi.com sot?23 case 318 style 8 marking diagram 1 3 2 1 bxx m bxx = device code xx = (refer to page 2) m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. device package shipping ? ordering information mmbz52xxelt1 sot?23 3000/tape & reel mmbz52xxelt3g sot?23 (pb?free) 10000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. mmbz52xxelt1g sot?23 (pb?free) 3000/tape & reel mmbz52xxelt3 sot?23 10000/tape & ree l devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
mmbz5221elt1 series http://onsemi.com 2 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f zener voltage regulator i f v i i r i zt v r v z v f electrical characteristics (pinout: 1-anode, 2-nc, 3-cathode) (v f = 0.9 v max @ i f = 10 ma for all types.) device device marking zener voltage (note 4) zener impedance leakage current v z (v) @ i zt z zt @ i zt z zk @ i zk i r @ v r min nom max ma ma a v mmbz5221elt1/t3, g be2 2.28 2.4 2.52 20 30 1200 0.25 100 1 mmbz5226elt1/t3, g be7 3.13 3.3 3.47 20 28 1600 0.25 25 1 mmbz5228elt1/t3, g be9 3.70 3.9 4.10 20 23 1900 0.25 10 1 mmbz5229elt1/t3, g bf1 4.08 4.3 4.52 20 22 2000 0.25 5 1 mmbz5230elt1/t3, g bf2 4.46 4.7 4.94 20 19 1900 0.25 5 2 mmbz5231elt1/t3,g bf3 4.84 5.1 5.36 20 17 1600 0.25 5 2 mmbz5232elt1/t3,g bf4 5.32 5.6 5.88 20 11 1600 0.25 5 3 mmbz5234elt1/t3,g bf6 5.89 6.2 6.51 20 7 1000 0.25 5 4 mmbz5235elt1/t3,g bf7 6.46 6.8 7.14 20 5 750 0.25 3 5 mmbz5236elt1/t3, g bf8 7.12 7.5 7.88 20 6 500 0.25 3 6 mmbz5237elt1/t3, g bf9 7.79 8.2 8.61 20 8 500 0.25 3 6.5 mmbz5239elt1/t3, g bg2 8.65 9.1 9.55 20 10 600 0.25 3 7 mmbz5240elt1/t3,g bg3 9.50 10 10.50 20 17 600 0.25 3 8 mmbz5242elt1/t3,g bg5 11.40 12 12.60 20 30 600 0.25 1 9.1 mmbz5243elt1/t3, g bg6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 mmbz5244elt1/t3, g bg7 13.30 14 14.70 9 15 600 0.25 0.1 10 mmbz5245elt1/t3,g bg8 14.25 15 15.75 8.5 16 600 0.25 0.1 11 mmbz5246elt1, g? bg9 15.20 16 16.80 7.8 17 600 0.25 0.1 12 mmbz5248elt1/t3,g bh2 17.10 18 18.90 7 21 600 0.25 0.1 14 mmbz5250elt1/t3,g bh4 19.00 20 21.00 6.2 25 600 0.25 0.1 15 4. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. *the ?g?? suffix indicates pb?free package available. ?mmbz5246el, mmbz5252el, and mmbz5265el not available in 10,000/tape & reel.
mmbz5221elt1 series http://onsemi.com 3 electrical characteristics (continued) (pinout: 1-anode, 2-nc, 3-cathode) (v f = 0.9 v max @ i f = 10 ma for all types.) device* device marking zener voltage (note 5) zener impedance leakage current v z (v) @ i zt z zt @ i zt z zk @ i zk i r @ v r min nom max ma ma a v mmbz5252elt1, g? bh6 22.80 24 25.20 5.2 33 600 0.25 0.1 18 mmbz5253elt1/t3 bh7 23.75 25 26.25 5 35 600 0.25 0.1 19 mmbz5254elt1/t3,g bh8 25.65 27 28.35 4.6 41 600 0.25 0.1 21 mmbz5255elt1/t3, g bh9 26.60 28 29.40 4.5 44 600 0.25 0.1 21 mmbz5256elt1/t3, g bj1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 mmbz5257elt1/t3,g bj2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 mmbz5258elt1/t3, g bj3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 mmbz5262elt1/t3, g bj7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37 mmbz5263elt1/t3, g bj8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 mmbz5265elt1, g? bk1 58.90 62 65.10 2 185 1400 0.25 0.1 47 5. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c. *the ?g?? suffix indicates pb?free package available. ?mmbz5246el, mmbz5252el, and mmbz5265el not available in 10,000/tape & reel.
mmbz5221elt1 series http://onsemi.com 4 typical characteristics vz , temperature coefficient (mv/ c) v z , nominal zener voltage (v) ?3 ?2 ?1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values for mmbz5221blt1 series v z @ i zt vz , temperature coefficient (mv/ c) 100 10 1 10 10 0 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values for mmbz5221blt1 series v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1 .2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c
mmbz5221elt1 series http://onsemi.com 5 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) 9 0 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.00 1 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c ?55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v) 100 figure 9. 8 20 s pulse waveform 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s half value i rsm /2 @ 20 s % of peak pulse current peak value i rsm @ 8 s
mmbz5221elt1 series http://onsemi.com 6 package dimensions sot?23 to?236ab case 318?08 issue am mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 style 8: pin 1. anode 2. no connection 3. cathode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mmbz5221elt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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